The CMPD4150 is a high current, high speed switching diode manufactured by Central Semiconductor Corp. It is manufactured by the epitaxial planar process and packaged in an epoxy molded surface mount package. It is designed for high speed switching applications.
The document describes the Central Semiconductor CMPD4150, an ultra-high speed silicon switching diode manufactured using the epitaxial planar process. It is designed for high speed switching applications and comes in an epoxy molded surface mount SOT-23 case with a marking code of ABA.
Key specifications include a continuous reverse voltage of 50V, a peak repetitive forward current of 250mA, and a power dissipation of 350mW. The device operates within a junction temperature range of -65 to +150°C.
| Continuous Reverse Voltage | 50 V |
|---|---|
| Peak Repetitive Forward Current | 250 mA |
| Forward Surge Current (tp=1 sec) | 1000 mA |
| Power Dissipation | 350 mw |
| Junction Temperature Range | -65 to +150 oC |
The maximum continuous forward current is 250 mA.
The peak repetitive forward current is 250 mA.
The maximum power dissipation is 350 mW.
The operating and storage temperature range is -65 to +150 °C.