This data sheet lists the maximum ratings, electrical characteristics etc. of CMPD2003, CMPD2004, CMPD2004S.
This document describes the CENTRAL SEMICONDUCTOR CMPD2003, CMPD2004, and CMPD2004S types as silicon switching diodes manufactured by the epitaxial planar process. These components are designed for applications requiring high voltage capability.
| Continuous Reverse Voltage (VR) | 200 V (CMPD2003), 240 V (CMPD2004S) |
|---|---|
| Peak Repetitive Reverse Voltage (VRRM) | 250 V (CMPD2003), 300 V (CMPD2004S) |
| Continuous Forward Current (IF) | 250 mA (CMPD2003), 225 mA (CMPD2004S) |
| Forward Surge Current (tp=1 ms) | 4000 mA |
| Power Dissipation (Pp) | 350 mW |
The maximum continuous reverse voltage is 200 V.
The maximum power dissipation is 350 mW.
The operating and storage junction temperature range is -65 to +150 °C.