The document describes the features and characteristics of BAT 68W silicon Schottky diodes, which are mainly used for mixer applications in the VHF / UHF range and high-speed switching applications.
This document is a technical datasheet for the Infineon BAT 68W series of Silicon Schottky Diodes. The components are specifically intended for use in mixer applications within the VHF and UHF frequency ranges, as well as for high-speed switching applications.
The datasheet provides detailed electrical characteristics, including breakdown voltage, reverse current, forward voltage, diode capacitance, and differential forward resistance. It also includes maximum ratings such as reverse voltage (8V), forward current (130mA), and power dissipation limits depending on the specific package variant.
| Diode reverse voltage | 8 V |
|---|---|
| Forward current | 130 mA |
| Total power dissipation (BAT 68W) | 150 mW |
| Junction temperature | 150 °C |
| Operating temperature range | -65 ... 150 |
| Breakdown voltage (typical) | 8 V |
| Reverse current (VR=1V, Ta=60°C) | 1.2 pA |
| Diode capacitance | 1 pF |
The device supports a forward current of 130 mA and has a maximum reverse voltage rating of 8 V.
The BAT 68W model can dissipate up to 150 mW when the ambient temperature is 97 °C.
The diode can operate between -65 °C and 150 °C.