This document describes the features and characteristics of BCW65 and BCW66, including their applications in general AF, high current gain, low collector-emitter saturation voltage, etc. It also provides information about complementary types BCW67 and BCW68.
This document provides a comprehensive technical overview of the BCW65 and BCW66 series of NPN Silicon AF Transistors designed for general audio frequency (AF) applications. Key features highlighted include high current gain and low collector-emitter saturation voltage. The datasheet covers various package types, including SOT23 variants marked as A through H.
| Collector-emitter voltage (VCEO) | 45 V |
|---|---|
| DC collector current (IC) | 800 mA |
| Peak collector current (ICM) | 1 A |
| Total power dissipation (Ptot) at TS = 79 °C | 330 mW |
| Junction temperature (Tj) | 150 °C |
The maximum total power dissipation is 330 mW when the temperature is 79 °C.
The maximum collector-emitter voltage for the BCW65 is 32 V.
The maximum DC collector current is 800 mA.