BCV28 and BCV48 are PNP silicon Darlington transistors designed for general AF applications. They have high collector current and high current gain. Complementary types BCV29 and BCV49 (NPN) are also available.
This datasheet covers the BCV28 and BCV48 NPN Silicon Darlington Transistors, designed for general AF applications. Key features include high collector current and high current gain capabilities. The document provides comprehensive data on maximum ratings such as collector-emitter voltage and total power dissipation, along with pin configurations for the SOT89 package.
| Collector-emitter voltage (VCEO) | 30 V (BCV28), 60 V (BCV48) |
|---|---|
| Collector-base voltage (VCBO) | 40 V (BCV28), 80 V (BCV48) |
| Emitter-base voltage (VEBO) | 10 V |
| DC collector current (IC) | 500 mA |
| Peak collector current (ICM) | 800 mA |
| Junction temperature (Tj) | 150 °C |
The transistors are available in the SOT89 package.
The complementary types are BCV29 and BCV49.
The maximum junction temperature is 150 °C.