BCV29, BCV49 are NPN silicon Darlington transistors with high collector current and high current gain.
This document provides technical specifications for the BCV29 and BCV49 NPN Silicon Darlington transistors. These components are designed for general AF (Audio Frequency) applications and feature high collector current and high current gain capabilities. The datasheet includes information on complementary PNP types, specifically the BCV28 and BCV48.
The document details maximum ratings such as collector-emitter voltage, power dissipation, and junction temperature limits. It also presents electrical characteristics including DC current gain (hFE), breakdown voltages, cutoff currents, transition frequency (fT), and capacitance values under various test conditions.
| Collector-emitter voltage (VCEO) | 30 V |
|---|---|
| Collector-base voltage (VCBO) | 60 V |
| Emitter-base voltage (VEBO) | 10 V |
| DC collector current (IC) | 500 mA |
| Peak collector current (ICM) | 800 mA |
| Total power dissipation (Ptot) | 1 W |
| Junction temperature (Tj) | 150 °C |
The complementary types are the BCV28 and BCV48, which are PNP versions.
The maximum junction temperature is 150 °C.