BCW61A is a type of silicon PNP transistor in the BCW61 series. This series of transistors has the characteristics of high current gain, low collector-emitter saturation voltage and low noise, and can be used in audio input stages and driver applications.
This document is a technical datasheet for the Infineon BCW61 and BCX71 series of PNP Silicon AF transistors. These components are specifically designed for AF input stages and driver applications, offering high current gain and low collector-emitter saturation voltage. The datasheet provides comprehensive electrical characteristics, maximum ratings, and thermal resistance data for various package types including SOT23.
| Collector-emitter voltage | 32 V (BCW61/61FF), 45 V (BCX71) |
|---|---|
| DC collector current | 100 mA |
| Peak collector current | 200 mA |
| Total power dissipation | 330 mW (Tg = 71 °C) |
| Junction temperature | 150 °C |
| Transition frequency | 250 MHz |
These transistors are intended for use in AF input stages and driver applications.
The maximum total power dissipation is 330 mW when the temperature is 71 °C.
The maximum junction temperature is 150 °C.