Infineon BC807U PNP Silicon Transistor Array Datasheet

BC807U is a PNP Silicon Transistor Array for AF input stages and driver applications with high current gain, low collector-emitter saturation voltage and two (galvanic) internal isolated Transistors with good matching in one package


Infineon BC807U PNP Silicon Transistor Array Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
44 KB
Published
10 July, 2012
Updated
30 September, 2023
Model
BC807
MD5 checksum
50DD94595B98D486C799B32D452BC5A0

About this manual

The document describes the Infineon Technologies BC807U, a PNP silicon transistor array intended for audio frequency (AF) input stages and driver applications. The device features two galvanically isolated transistors within a single package, offering high current gain and low collector-emitter saturation voltage.

Key electrical characteristics include a maximum collector-emitter voltage of 45 V, a DC current gain ranging from 160 to 400 at specific conditions, and a transition frequency up to 200 MHz. The datasheet provides detailed tables for maximum ratings, electrical characteristics, and graphical representations of power dissipation versus temperature.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • AC Characteristics
  • Total Power Dissipation
  • Collector Cutoff Current
  • Permissible Pulse Load
  • Saturation Voltage Curves
  • Current Gain Curves
  • Transition Frequency Curves
  • Package Information

Specifications

Collector-emitter voltage (VcEO)45 V

Frequently asked questions

What is the primary application of the BC807U?

It is designed for AF input stages and driver applications.

How many transistors are inside the package?

The device contains two galvanically isolated transistors in one package.

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