BAT 68-08S is a silicon Schottky diode array designed for mixer applications in the VHF / UHF range and high-speed switching applications. It has a breakdown voltage of 8V, a maximum forward current of 130mA, a maximum junction temperature of 150℃, and a forward resistance of 10Ω.
This document is a preliminary data sheet for the Infineon BAT 68-08S, a Silicon Schottky Diode Array designed for mixer applications in the VHF/UHF range and high-speed switching. The device is available in a SOT-363 package with a specific tape loading orientation and marking scheme for identification.
The datasheet provides maximum ratings including a diode reverse voltage of 8 V and a forward current of 130 mA. It also lists electrical characteristics such as breakdown voltage, reverse current, forward voltage, and diode capacitance under specific test conditions.
| Diode reverse voltage | 8 V |
|---|---|
| Forward current | 130 mA |
| Total power dissipation | 150 mW |
| Junction temperature | 150 °C |
| Storage temperature | -55 ... 150 |
| Breakdown voltage | 8 V |
| Reverse current | 0.1 |yHA |
| Diode capacitance | 1 pF |
The device is designed for mixer applications in the VHF / UHF range and for high-speed switching applications.
The maximum forward current rating is 130 mA.
The maximum total power dissipation is 150 mW when the temperature is below 40°C.