This document describes the features and characteristics of the BAT 68 series silicon Schottky diodes, which are mainly used for mixer applications in the VHF / UHF range and high-speed switching applications.
The document describes the BAT 68 series of Silicon Schottky Diodes manufactured by Infineon Technologies. These devices are specifically designed for mixer applications in the VHF / UHF range as well as for high-speed switching applications.
The datasheet details various models within the series, including BAT 68, BAT 68-04, BAT 68-05, and BAT 68-06. It provides comprehensive technical data such as maximum ratings (reverse voltage up to 8V), electrical characteristics at 25°C, and graphical representations of forward current versus temperature and voltage.
| Forward current | 130 mA |
|---|---|
| Total power dissipation (Ts < 60 °C) | 150 mW |
| Storage temperature | -55 ... 150 °C |
| Junction - ambient thermal resistance | <750 K/W |
| Reverse current (Va = 1V, Ta = 60°C) | 1.2 µA |
| Diode capacitance (Va = 0 V, f= 1 MHz) | <1 pF |
The device is suitable for mixer applications in the VHF / UHF range and for high-speed switching applications.
The maximum junction temperature is 150 °C.