BAT 64-07 is a Schottky diode from BAT company. It has the characteristics of low loss, fast recovery, meter protection, bias isolation and clamping applications. Its reverse voltage is 40V, the average forward current is 120mA, the surge forward current is 800mA, the total power dissipation is 250mW, the junction temperature is 150°C, and the storage temperature is -55~150°C.
The document is a datasheet for the Infineon BAT 64-07, a Silicon Schottky Diode designed for low-loss, fast-recovery applications such as meter protection, bias isolation, and clamping. The device features an integrated diffused guard ring and is housed in a SOT-143 package.
Key specifications include a maximum reverse voltage of 40 V, a forward current of 250 mA, and a total power dissipation of 250 mW at a junction temperature of 150 °C. The datasheet provides detailed electrical characteristics for DC and AC parameters, including reverse current and forward voltage at various temperatures and currents.
| Diode reverse voltage | 40 V |
|---|---|
| Forward current | 250 mA |
| Average forward current | 120 mA |
| Surge forward current | 800 mA |
| Total power dissipation | 250 mW |
| Junction temperature | 150 °C |
| Storage temperature | -55 ... 150 °C |
| Reverse current (typical) | 2 µA |
| Forward voltage (typical) | 350 mV |
| Diode capacitance (typical) | 6 pF |
The maximum reverse voltage (VR) is 40 V.
The maximum forward current (Ir) is 250 mA.
The typical forward voltage (Ve) at 1 mA is 350 mV.
The device is available in a SOT-143 package.