This document describes the features and characteristics of BAT 17 series silicon Schottky diodes, which are suitable for mixer applications in the VHF/UHF range and high-speed switching applications.
This document is a technical datasheet for the Infineon Technologies BAT 17 series of Silicon Schottky Diodes. The product line includes specific variants (BAT 17, BAT 17-04, BAT 17-05, BAT 17-06) intended for mixer applications in the VHF/UHF range and high-speed switching applications.
The datasheet provides detailed electrical characteristics, including DC parameters such as breakdown voltage, reverse current, and forward voltage at various currents. It also lists AC characteristics like diode capacitance and forward resistance. Maximum ratings are specified for reverse voltage (4V), forward current (130 mA), and power dissipation (150 mW). The components are available in the SOT-23 package.
| Product Type | Silicon Schottky Diode |
|---|---|
| Diode reverse voltage (Vr) | 4 V |
| Forward current (If) | 130 mA |
| Total power dissipation (Prot) | 150 mW |
| Junction temperature (Tj) | 150 °C |
| Operating temperature range (Top) | -55 ... 150 |
The maximum diode reverse voltage (Vr) is rated at 4 V.
The maximum forward current rating is 130 mA.
The device can dissipate a maximum of 150 mW.