This document describes the features and characteristics of the BAT 62-07W silicon Schottky diode, including its low barrier diode for detectors up to GHz frequencies, maximum ratings such as reverse voltage and junction temperature, and electrical characteristics such as reverse current and forward voltage.
This document is a technical datasheet for the Infineon BAT 62-07W, a Silicon Schottky Diode designed as a low barrier diode for detector applications up to GHz frequencies. The device is available in an SOT-343 package with specific pin configurations marked on the component.
The datasheet provides comprehensive electrical characteristics including DC parameters such as reverse current and forward voltage, as well as AC characteristics like diode capacitance and series inductance. It also includes maximum ratings for voltage, power dissipation, and temperature limits.
| Forward current | 20 mA |
|---|---|
| Total power dissipation | 100 mW |
| Forward voltage (typical) | 0.58 V |
| Diode capacitance (typical) | 0.35 pF |
The maximum reverse voltage rating is 40 V.
The typical forward voltage drop is 0.58 V.
The diode capacitance was measured at a frequency of 1 MHz.