BAT 18 is a low-loss VHF / UHF switch that can be used above 10 MHz. It is a PIN diode with low forward resistance.
This document is a datasheet for the Infineon BAT 18 series of Silicon RF Switching Diodes. It describes the device as a low-loss VHF/UHF switch suitable for frequencies above 10 MHz, utilizing a PIN diode structure with low forward resistance.
| Diode reverse voltage | 35 V |
|---|---|
| Forward current | 100 mA |
| Operating temperature range | -55 ... 150 °C |
| Reverse current (VR=20V) | 20 nA |
| Forward voltage (Ip = 100 mA) | 0.38 ... 1.2 V |
| Diode capacitance (VR = 20 V, f= 1 MHz) | 0.75 pF |
| Forward resistance (Ip = 5 mA, f= 100 MHz) | 0.4 ... 0.7 |Q |
The operating temperature range is from -55 to 150 °C.
The maximum reverse voltage rating is 35 V.