BAT 62 is a low barrier diode for detectors up to GHz frequencies.
The Infineon BAT 62 is a Silicon Schottky Diode designed as a low barrier diode for detector applications operating up to GHz frequencies. It is housed in a SOT-143 package and is marked as BAT 62.
The document provides maximum ratings, including a reverse voltage of 40 V and a forward current of 20 mA. It also details electrical characteristics such as reverse current, forward voltage, diode capacitance, and differential resistance at 25°C.
| Diode reverse voltage | 40 V |
|---|---|
| Forward current | 20 mA |
| Total power dissipation | 100 mW |
| Junction temperature | 150 °C |
| Storage temperature | -55 ... 150 |
| Forward voltage | 0.85 V |
| Diode capacitance | 0.35 | 0.6 |pF |
The maximum reverse voltage (Va) is 40 V.
The maximum forward current (Ip) is 20 mA.
The typical forward voltage (Vf) is 0.85 V at a forward current of 2 mA.