This document describes a low barrier diode for detectors up to GHz frequencies. The product has a reverse voltage of 40V and a forward current of 2mA. Additionally, the document provides information on the pin configuration and package of the device.
This document provides preliminary technical data for the Infineon BAT 62-08S, a Silicon Schottky Diode Array designed for detector applications operating up to GHz frequencies. The device is available in a SOT-363 package and is noted as an ESD-sensitive device requiring careful handling precautions.
The datasheet details maximum ratings, including a reverse voltage of 40 V and a forward current of 20 mA. It also lists electrical characteristics such as reverse current, forward voltage, and diode capacitance at 25°C, along with graphical representations of performance under varying temperatures and voltages.
| Diode reverse voltage | 40 V |
|---|---|
| Forward current | 20 mA |
| Total power dissipation | 100 mW |
| Junction temperature | 150 °C |
| Storage temperature | -75 ... 150 |
| Reverse current | 10 pA |
| Forward voltage | 0.58 V |
| Diode capacitance | 0.35 pF |
| Package | SOT-363 |
The maximum reverse voltage is 40 V.
The forward current rating is 20 mA.
Yes, it is an ESD-sensitive device and handling precautions must be observed.