BAT 63-07W is a silicon Schottky diode with a maximum reverse voltage of 3 V and a maximum forward current of 100 mA. This diode is suitable for high-frequency detection applications and high-speed switching applications.
This document is a preliminary data sheet for the Infineon BAT 63-07W, a Silicon Schottky Diode designed for high-speed switching and detector applications up to GHz frequencies. The device is housed in a SOT-343 package and is noted as an ESD-sensitive device requiring careful handling.
The datasheet provides maximum ratings including a reverse voltage of 3V and a forward current of 100mA. It lists specific electrical characteristics such as reverse current, forward voltage, diode capacitance, and series inductance at 25°C. Graphical data illustrates the relationship between forward current and reverse voltage, as well as permissible pulse loads under various ambient temperatures.
| Diode reverse voltage | 3 V |
|---|---|
| Forward current | 100 mA |
| Total power dissipation | 100 mW |
| Junction temperature | 150 °C |
| Storage temperature | -55 ... 150 |
| Reverse current | 10 pA |
| Forward voltage | 190 ... 300 mV |
| Diode capacitance | 0.65 ... 0.85 pF |
The maximum reverse voltage is 3 V.
The maximum forward current is 100 mA.
The junction temperature rating is 150 °C.
The typical forward voltage is 190 mV at 1mA.