This document is a product specification sheet for the BFG93A and BFG93A/X NPN transistors, designed for wideband applications in the UHF and microwave range. The transistors are housed in a 4-pin, dual-emitter SOT143B plastic package and feature gold metallization for excellent reliability.
The datasheet details key electrical parameters such as collector-base voltage, transition frequency, and maximum unilateral power gain. It also includes limiting values, thermal characteristics, SPICE parameters for circuit simulation, and various performance graphs illustrating gain, noise figure, and stability circles.
| Package Type | 4-pin, dual-emitter SOT143B plastic package |
|---|---|
| Collector-Base Voltage (VCBO) | 15 V |
| Collector-Emitter Voltage (VCEO) | 12 V |
| Collector Current (IC) | 35 mA |
| Total Power Dissipation (Ptot) | 300 mW |
| Transition Frequency (fT) | 4.5 to 6 GHz |
| Noise Figure (F) | -1.7 dB |
| Storage Temperature (Tstg) | -65 to +150 °C |
| Junction Operating Temperature (Tj) | - 175 °C |
It is an NPN transistor in a 4-pin, dual-emitter SOT143B plastic package.
They are designed for wideband applications in the UHF and microwave range.
The maximum DC collector current is 35 mA.
The transition frequency is between 4.5 and 6 GHz.