This document is the product specification of BFG21W UHF power transistor. It introduces the features and characteristics of the product, including high power gain, high efficiency, 1.9 GHz operating area, linear and nonlinear operation. The product is used in the common emitter class-AB output stage of hand held radio equipment at 1.9 GHz, such as DECT, PHS, etc., and as a driver for DCS1800, 1900.
This document is a product specification datasheet for the Philips BFG21W, an NPN double polysilicon bipolar power transistor with a buried layer. It is encapsulated in a plastic, 4-pin dual-emitter SOT343R package and features high power gain and efficiency suitable for linear and non-linear operation.
| Operating Frequency | 1.9 GHz |
|---|---|
| Collector-Base Voltage (Max) | 15 V |
| Collector-Emitter Voltage (Max) | 4.5 V |
| Emitter-Base Voltage (Max) | 1 V |
| Collector Current (DC) (Max) | 500 mA |
| Total Power Dissipation (Max) | 600 mW |
| Operating Junction Temperature (Max) | 150 °C |
It is used as a common emitter class-AB output stage in hand held radio equipment at 1.9 GHz, such as DECT and PHS.
The device is encapsulated in a plastic, 4-pin dual-emitter SOT343R package.
The maximum operating junction temperature (Tj) is 150 °C.