BFG135 is a NPN silicon planar epitaxial transistor produced by Philips Corporation. It is packaged in SOT223 and is mainly used for wideband amplifier applications. Its small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives an excellent temperature profile.
This document is a product specification datasheet for the Philips BFG135, an NPN silicon planar epitaxial transistor designed for wideband amplifier applications. The device is housed in a plastic SOT223 envelope and features small emitter-base structures with integrated emitter-ballasting resistors to ensure high output voltage capabilities at low distortion levels. The distribution of active areas across the device surface provides an excellent temperature profile.
| Package type | plastic SOT223 envelope |
|---|
The maximum junction temperature is 175 °C.
The maximum total power dissipation is 1 W when the temperature at the soldering point is up to 145 °C.
The typical DC current gain is 130 when the collector-emitter voltage is 10 V and the junction temperature is 25 °C.