California Eastern Laboratories NE5510279A RF Power MOSFET Datasheet

The NE5510179A is a 3.5V GSM1800 and GSM 1900 handset transmission driver amplifier from NEC. The device is manufactured using NEC's NEWMOS technology (NEC's 0.6µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5dBm output power with 50% power added efficiency at 1.9GHz under the 3.5V supply voltage, or can deliver 29dBm output power at 3.5V supply voltage.

Brand: CEL
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 5
File format: PDF
File size: 39 KB
Published: 06 July, 2012
Updated: 30 September, 2023
Model: NE5510279A
MD5 checksum: ED3177D7D36DAD61EF6D1FC3C19C0224
PDF: California Eastern Laboratories NE5510279A RF Power MOSFET Datasheet PDF

About this manual

The document describes the NE5510279A, an N-Channel silicon power MOSFET manufactured using NEC's NEWMOS technology. It is specifically designed as a transmission power amplifier for 3.5 V GSM1800 handsets and other digital cellular phones.

What's inside

Features
Applications
Electrical Characteristics
Performance Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Typical Performance Curves
Scattering Parameters
PCB Layout

Specifications

Supply Voltage Range	2.8 to 6.0 V
Drain Supply Voltage Max	8.5 V

Frequently asked questions

What is the primary application of this device?

It is specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets.

What is the maximum operating temperature?

The recommended operating temperature range is -30°C to +85°C.

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