NEC's NE680 series is an NPN epitaxial silicon transistor designed for low noise, high gain, and low-cost applications. Suitable for applications up to 6 GHz. Both the chip and micro-x versions of NE680 are suitable for applications up to 6 GHz. The NE680 die is also available in six different low-cost plastic surface mount package styles. The high fT of NE680 makes it ideal for low voltage/low current applications, as low as 0.5 V / 0.5 mA. The maximum IC for the NE680 series is 35 mA. For higher current applications, see the NE681 series.
This datasheet presents NEC's NE680 series of NPN epitaxial silicon transistors. The text states that the series is designed for low noise, high gain and low cost applications, that both chip and micro-x versions are suitable for applications up to 6 GHz, and that the NE680 die is available in six plastic surface mount package styles.
The document lists features including fT = 10 GHz, 1.7 dB noise figure at 2 GHz and 2.6 dB at 4 GHz, and associated gain of 12.5 dB at 2 GHz and 8.0 dB at 4 GHz. It provides electrical characteristics, absolute maximum ratings, typical performance curves, typical noise parameters and common emitter scattering parameters. A page 1 note says part number NE68035 is not recommended for new design.
| Transistor type | NPN epitaxial silicon transistor |
|---|---|
| Frequency applications | up to 6 GHz |
| Gain bandwidth product | 10 GHz |
| Noise figure | 1.7 dB at 2 GHz; 2.6 dB at 4 GHz |
| Associated gain | 12.5 dB at 2 GHz; 8.0 dB at 4 GHz |
| Collector current (IC) maximum | 35 mA |
| Collector to base voltage (VCBO) | 20 V |
| Collector to emitter voltage (VCEO) | 10 V |
| Emitter to base voltage (VEBO) | 1.5 V |
| Storage temperature | -65 to +150 °C |
It is designed for low noise, high gain and low cost applications.
IC max for the series is 35 mA.
The listed gain bandwidth product fT is 10 GHz.
It has a noise figure of 1.7 dB at 2 GHz and 2.6 dB at 4 GHz.