The NE5511279A is an N-channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.5 V radio systems. This device can deliver 40.0 dBm output power with 48% power added efficiency at 900 MHz using a 7.5 V supply voltage.
The CEL NE5511279A is an N-Channel silicon power laterally diffused MOSFET designed as a transmission power amplifier for 7.5 V radio systems. Manufactured using NEC's NEWMOS1 technology, the device is housed in a 5.7 x 5.7 x 1.1 mm surface mount package.
| Output Power (Typical) @ 900 MHz | 40.0 dBm |
|---|---|
| Output Power (Typical) @ 460 MHz | 40.5 dBm |
| Power Added Efficiency (Typical) @ 900 MHz | 48% |
| Linear Gain (Typical) @ 900 MHz | 15.0 dB |
| Supply Voltage Range | 2.8 to 8.0 V |
| Package Dimensions | 5.7 x 5.7 x 1.1 mm MAX |
| Drain to Source Breakdown Voltage | 20 to 24 V |
The device is designed for UHF radio systems, cellular repeaters, two-way radios (FRS/GMRS), and fixed wireless applications.
The absolute maximum drain current rating is 3.0 A.
The device can be stored between -55°C and +125°C.