The NE552R479A is NEC's N-channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for mobile and fixed wireless applications.
The document describes the CEL NE552R479A, an N-Channel silicon power laterally diffused MOSFET designed specifically as a transmission power amplifier for mobile and fixed wireless applications. The device utilizes NEC's NEWMOS2 technology and is housed in a surface mount package.
| Output Power | +26 dBm TYP |
|---|---|
| Linear Gain | 11 dB TYP |
| Supply Voltage | 2.8 to 6 V |
| Package Dimensions | 5.7x5.7x1.1 mm MAX |
| Drain Current | 230 mA |
| Drain-to-Source Breakdown Voltage | 15 to 18 V |
| Channel Temperature | 125 °C |
The maximum total power dissipation is 10 W.
The storage temperature range is -55 to +125 °C.