Key facts
- Brand
- CEL
- Model
- NE5510279A
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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California Eastern Laboratories NE5510279A RF Power MOSFET Datasheet
The document describes the NE5510279A, an N-Channel silicon power MOSFET manufactured using NEC's NEWMOS technology. It is specifically designed as a transmission power amplifier for 3.5 V GSM1800 handsets and other digital cellular phones.
Read onlineCEL NE5510279A specifications
| Power Added Efficiency (Typ) | 45% at 3.5 V, 1.8 GHz |
|---|---|
| Linear Gain (Typ) | 10 dB at 3.5 V, 1.8 GHz |
| Supply Voltage Range | 2.8 to 6.0 V |
Source: California Eastern Laboratories NE5510279A RF Power MOSFET Datasheet
All CEL NE5510279A documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the primary application of this device?
It is specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets.
From: California Eastern Laboratories NE5510279A RF Power MOSFET Datasheet
What technology is used to manufacture the dies?
The dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 um WSi gate lateral MOSFET).
From: California Eastern Laboratories NE5510279A RF Power MOSFET Datasheet
What is the primary application of this device?
It is specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets.
From: California Eastern Laboratories NE5510279A RF Power MOSFET Datasheet
What is the maximum operating temperature?
The recommended operating temperature range is -30°C to +85°C.
From: California Eastern Laboratories NE5510279A RF Power MOSFET Datasheet