CEL NE5510279A Manuals

The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 32 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.5 V supply voltage, or can deliver 31 dBm output power at 2.8 V by varying the gate voltage as a power control function.

The NE5510179A is a 3.5V GSM1800 and GSM 1900 handset transmission driver amplifier from NEC. The device is manufactured using NEC's NEWMOS technology (NEC's 0.6µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5dBm output power with 50% power added efficiency at 1.9GHz under the 3.5V supply voltage, or can deliver 29dBm output power at 3.5V supply voltage.