This datasheet provides the specifications of NEC's NE681 series of NPN transistors. This series of transistors has high gain bandwidth product, low noise figure and high associated gain, suitable for low noise, high gain, low cost amplifier applications.
The NEC NE681 series consists of NPN epitaxial silicon transistors designed for low noise, high gain, and low cost amplifier applications. Both chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The series features a unique device characteristic that allows a single matching point to simultaneously achieve both low noise and high gain.
| Gain Bandwidth Product (fT) | 8 GHz |
|---|---|
| Noise Figure at 1 GHz | 1.2 dB |
| Noise Figure at 2 GHz | 1.6 dB |
| Associated Gain at 1 GHz | 15 dB |
| Collector to Base Voltage (VCBO) | 20 V |
| Operating Junction Temperature | 150°C |
| Storage Temperature | -55 to +150°C |
Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz.
The typical noise figure is 1.2 dB at 1 GHz.