NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2V GSM900 handsets. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function.
The CEL NE5520379A is an N-Channel silicon power MOSFET specifically designed as a transmission power amplifier for 3.2V GSM900 handsets. Manufactured using NEC's NEWMOS technology, the device is housed in a 5.7x5.7x1.1 mm surface mount package. It delivers 35.5 dBm output power at 915 MHz and 3.2 V with a typical power added efficiency of 65%.
| Output Power | 35.5 dBm typ @ 915 MHz, 3.2 V |
|---|---|
| Linear Gain | 16 dB typ @ 915 MHz |
| Power Added Efficiency | 65% typ @ 3.2 V, 915 MHz |
| Supply Voltage | 2.8 to 6.0 V |
| Package Dimensions | 5.7x5.7x1.1 mm MAX |
| Operating Drain Current | 1.0 A |
| Drain-to-Source Breakdown Voltage | 15 to 20 V |
The device delivers 35.5 dBm output power at 915 MHz and 3.2 V.
Yes, it is listed for use in 3.2 V GSM900/DCS 1800 Dual Band Handsets.