CEL Manuals

UPB1513TU is a silicon germanium (SiGe) monolithic integrated circuit designed as a divide by 4 prescaler IC for satellite communications.

NEC's NX8564/8565/8566LE Series is an Electro-Absorption (EA) modulator integrated, 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode. The module is capable of 2.5 Gb/s applications of over 360 km, 600 km, 240 km ultralong-reach and available for Dense Wavelength Division Multiplexing (DWDM) wavelengths based on ITU-T recommendations, enabling a wide range of applications.

The PS9617 and PS9617L are optically coupled isolators containing a GaAlAs LED on the input side and a photo diode and a signal processing circuit on the output side on one chip. The PS9617 is in a plastic DIP (Dual In-line Package) and the PS9617L is lead bending type (Gull-wing) for surface mounting.

NEC PS2501A-1 is an optically coupled isolator with high isolation voltage, BV: 5000 Vr.m.s. It contains a GaAs light emitting diode and an NPN silicon phototransistor.

The NX8571 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode module with wavelength monitor function. This device is temperature tunable over 4 × 50 GHz channels. Available at both C-band (1530.334 to 1565.087 nm) and L-band (1565.496 to 1608.760 nm) ITU-T grid wavelengths. This device is designed as CW light source and ideal for transmission systems in which external modulators are used.

The NX8562 series CW InGaAsP MQW DFB laser diode module is a 1550 nm Multiple Quantum Well (MQW) Distributed Feedback (DFB) laser diode with Polarization Maintain Fiber (PMF). This device is designed as a Continuous Wave (CW) light source and is ideal for optical transmission systems in which external modulators are used.

NEC's NX8563LA Series is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode module with Single Mode Fiber. It is designed as directly modulation light source and ideal for optical transmission systems. The device is available for Dense Wavelength Division Multiplexing (DWDM) wavelengths based on ITU-T recommendations, enabling a wide range of applications.

PS710E-1A,PS710EL-1A are NEC's 6-PIN DIP, 0.08 Ω LOW ON-STATE RESISTANCE 2.0 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET Solid State Relay OCMOS FET, with low on-state resistance, large continuous load current, 1-channel, low LED operating current, AC/DC switching line changer design, small package, low offset voltage and other features.

NEC's 870 MHz GaAs CATV PUSH-PULL AMPLIFIER MC-7831 MC-7832 MC-7833 features low distortion, high linear gain, low return loss, low temperature change gain, and can be used for 79, 110 and 132 channels applications.

UPG2118K is a 1.5W GaAs MMIC power amplifier developed by NEC Corporation. It uses E-mode FET technology, which has high efficiency and linearity. It is powered by a single +3.2V supply. It can be used in DCS/PCS1800, 915 and 2450 ISM bands.

The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets.

The NE5510179A is a 3.5V GSM1800 and GSM 1900 handset transmission driver amplifier from NEC. The device is manufactured using NEC's NEWMOS technology (NEC's 0.6µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5dBm output power with 50% power added efficiency at 1.9GHz under the 3.5V supply voltage, or can deliver 29dBm output power at 3.5V supply voltage.

The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 32 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.5 V supply voltage, or can deliver 31 dBm output power at 2.8 V by varying the gate voltage as a power control function.

The NE5511279A is an N-channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.5 V radio systems. This device can deliver 40.0 dBm output power with 48% power added efficiency at 900 MHz using a 7.5 V supply voltage.

NE5520279A is a low cost, high performance, high reliability LD-MOSFET from NEC, suitable for 0.7-2.5GHz fixed wireless, mobile wireless and other applications.