NE674 is a L to Ku band low noise GaAs MESFET from NEC, featuring a low noise figure with high associated gain employing a recessed 0.3 micron gate and triple epitaxial technology. This device is suitable for both amplifier and oscillator applications. This device is housed in a solder sealed hermetic, metal ceramic package for high reliability in space applications.
This document describes the NEC NE67400 and NE67483B, which are LTO Ku Band low noise GaAs MESFET amplifiers. These devices feature a low noise figure with high associated gain, utilizing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with SiO2 and Si3N4 for scratch protection and surface stability.
| Gate Width | 280 um |
|---|---|
| Gate Length | 0.3 pm |
| Drain to Source Voltage (Max) | 5.0 V |
| Channel Temperature (Max) | 175 C |
The minimum noise figure is 1.4 dB at 12 GHz.
The maximum drain current is 30 mA.
The storage temperature range is -65 to +175 degrees Celsius.