NE650103M is a 10 W GaAs MESFET designed by NEC for PCS, W-CDMA, WLL transmitter applications. It is capable of delivering 10 Watts of output power with high linear gain, high efficiency and excellent linearity.
The CEL NE650103M is a 10 W GaAs MESFET designed for PCS, W-CDMA, WLL, satellite uplink, and BWA transmitter applications. It delivers high output power with high linear gain, high efficiency, and excellent linearity. The device is housed in a low-cost plastic package and is lead-free.
| Linear Gain | 10.0 dB |
|---|---|
| Power Added Efficiency | 45 % |
| Saturated Drain Current | 2.0 A |
| Pinch-Off Voltage | -4.0 V |
| Thermal Resistance | 4.0 °C/W |
| Drain to Source Voltage | 15 V |
| Gate to Source Voltage | -7.0 V |
| Total Power Dissipation | 33 W |
| Channel Temperature | 175 °C |
It is designed for PCS, W-CDMA, WLL transmitter applications, as well as Satellite Uplink and BWA.
The device is usable up to 2.7 GHz.
Yes, the package is lead-free.
The typical Power Added Efficiency is 45% at 2.3 GHz.