The NEC NE677M04 is a high frequency NPN transistor with high gain bandwidth, high output power and high linear gain. The product is manufactured using NEC's HFT3 wafer process and is packaged in an M04 package with a SOT-343 footprint and a height of only 0.59mm.
The NE677M04 is a medium power NPN silicon high frequency transistor fabricated using NEC's HFT3 wafer process. It is housed in a new low profile/flat lead style M04 package with an SOT-343 footprint and a height of only 0.59 mm. The device is designed for applications ranging from 100 MHz to 3 GHz, making it suitable for the driver stage in mobile or fixed wireless applications.
| Transition Frequency (fT) | 15 GHz |
|---|---|
| Output Power (P1dB) | 15 dBm |
| Linear Gain (GL) | 15.5 dB |
| Collector to Base Voltage (VCBO) | 9.0 V |
| Collector Current (IC) | 50 mA |
| Total Power Dissipation | 205 mW |
| Junction Temperature (TJ) | 150 °C |
| Package Height | 0.59 mm |
The NE677M04 has a transition frequency of 15 GHz.
The maximum collector current rating is 50 mA.
The device is usable in applications from 100 MHz to 3 GHz.