The document describes an N-channel silicon power MOSFET called NE5520379A, which is designed as the transmission power amplifier for 3.2V GSM900 handsets. It features high output power, high linear gain, and high power added efficiency.
The document describes the NE5520379A, an N-channel silicon LD-MOSFET manufactured using NEC's NEWMOS technology (0.6 um WSi gate lateral MOSFET). It is specifically designed as a transmission power amplifier for 3.2V GSM900/DCS 1800 Class 4 handsets and other digital/analog cellular phones.
| Output Power (Typ) | +35.5 dBm @ 915 MHz, Vos = 3.2 V |
|---|---|
| Linear Gain (Typ) | 16 dB @ Pin = +10 dBm |
| Power Added Efficiency (Typ) | 65% @ Gate Drain |
| Operating Drain Current | 15 A |
| Package Dimensions | 5.7x5.7x1.1 mm MAX |
| Supply Voltage Range | 2.4 to 7.5 V |
The device delivers +35.5 dBm output power at 915 MHz with a supply voltage of 3.2 V.
The recommended operating temperature range is -30 to +85 °C.
Yes, a tape and reel package option is available for the NE5520379A.