CEL NE5510279A handbook(1)

Update: 01 October, 2023

The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 32 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.5 V supply voltage, or can deliver 31 dBm output power at 2.8 V by varying the gate voltage as a power control function.

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File format: PDF

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MD5 Checksum: B3981583BCCC787C22D50866C8952BEB

Publication date: 06 July, 2012

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PDF Link: CEL NE5510279A handbook(1) PDF