The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 32 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.5 V supply voltage, or can deliver 31 dBm output power at 2.8 V by varying the gate voltage as a power control function.
The document describes the NE5510279A, an N-Channel silicon power MOSFET manufactured using NEC's NEWMOS technology. It is specifically designed as a transmission power amplifier for 3.5 V GSM1800 handsets and other digital cellular phones.
| Power Added Efficiency (Typ) | 45% at 3.5 V, 1.8 GHz |
|---|---|
| Linear Gain (Typ) | 10 dB at 3.5 V, 1.8 GHz |
| Supply Voltage Range | 2.8 to 6.0 V |
It is specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets.
The dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 um WSi gate lateral MOSFET).
The absolute maximum rating for Drain Supply Voltage (Vbs) is 8.5 V.