NE5520279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. It can be operated at up to 6 V for higher power, Fixed Wireless Access applications.
The document is an initial data sheet for the NE5520279A, an N-Channel silicon power MOSFET manufactured using NEC's NEWMOS technology. It is housed in a low-cost plastic surface mount package (Package Outline 79A) and features high output power of +32 dBm typical at 1.8 GHz.
| Operating Drain Current (Max) | 800 mA |
|---|---|
| Drain-to-Source Breakdown Voltage (Min) | 15 V |
| Channel Temperature (Max) | 125 °C |
It is specially designed as a transmission power amplifier for 3.2 V GSM/DCS1800 Class 1 Handsets.
The maximum operating drain current is 800 mA.
The typical output power is 32.0 dBm.