NE5520279A is a low cost, high performance, high reliability LD-MOSFET from NEC, suitable for 0.7-2.5GHz fixed wireless, mobile wireless and other applications.
The NE5520279A is an N-Channel silicon power MOSFET manufactured using NEC's NEWMOS technology. It is specifically designed as a transmission power amplifier for 3.2 V GSM/DCS1800 Class 1 Handsets and can also be operated at up to 6 V for Fixed Wireless Access applications. The device is housed in a low cost plastic surface mount package (Package Outline 79A).
| Output Power | 32.0 dBm TYP |
|---|---|
| Linear Gain | 10 dB TYP |
| Power Added Efficiency | 45% TYP |
| Operating Drain Current | 800 mA |
| Drain-to-Source Breakdown Voltage | 18 V |
| Channel Temperature | 125 °C |
| Storage Temperature | -55 to +125 °C |
| Package | Surface Mount 79A |
It is specially designed as the transmission power amplifier for 3.2 V GSM/DCS1800 Class 1 Handsets.
The absolute maximum rating for the drain supply voltage (VDS) is 8.5 V.
The device provides a typical linear gain of 10 dB when operating at 1.8 GHz.
The typical operating drain current (ID) should not exceed 800 mA.