This document describes the features and characteristics of the HiPerFETTM power MOSFET series products from IXYS, including advanced low Qg process, international standard packages, low gate charge and capacitance, low RDS(on), and strong avalanche rating.
This document provides preliminary technical specifications for the IXYS HiPerFET™ Q-Class power MOSFETs, specifically models IXFH 66N20Q and IXFT 66N20Q. These N-Channel Enhancement Mode devices are designed with avalanche rating, high dv/dt capability, and low gate charge to facilitate easier driving and faster switching speeds.
| Drain-Source Voltage (Vdss) | 200 V |
|---|---|
| Continuous Drain Current (Ic) | 66 A |
| Pulse Drain Current (Ip) | 264 A |
| Total Gate Charge (Qg) | 3700 pF |
| On-State Resistance (Rds(on)) | 45 mΩ |