This document describes the features and characteristics of IXYS Corporation's products, including international standard packaging, low RDS(on), and high voltage performance.
This document provides preliminary data for the IXYS IXFK32N60, IXFN32N60, IXFK36N60, and IXFN36N60 N-Channel Enhancement Mode Power MOSFETs. These devices utilize the HiPerFET process and are available in TO-264 AA and miniBLOC (SOT-227) packages. Key features include a rugged polysilicon gate cell structure, low package inductance, and a fast intrinsic rectifier.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (32N60) | 32 A |
| RDS(on) Typ (36N60) | 0.18 Ω |
| RDS(on) Typ (32N60) | 0.25 Ω |
| Thermal Resistance Junction-to-Case | 0.25 K/W |
The maximum junction temperature (TJ) is 150 °C.
The maximum continuous drain current at 25°C ranges from 32 A to 36 A depending on the specific model.
The device can operate with a junction temperature up to 150 °C.
You must apply a mounting torque of either 0.9 Nm or 6 lb.in.