This datasheet is about IXYS N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family product information
This document provides preliminary data for the IXYS IXFJ32N50Q, an N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low t rr, HDMOS Family Power MOSFET. The device features a low profile, high power package designed for applications such as DC-DC converters, synchronous rectification, battery chargers, and switched-mode power supplies. Key advantages include high power density, easy up-grade path for TO-220 designs, and a rugged polysilicon gate cell structure.
| Drain-Source Voltage (VDS) | 500 V |
|---|---|
| Gate-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) | 32 A |
| Peak Diode Current (IAR) | 32 A |
| Thermal Resistance Junction-to-Case (RthJC) | 0.35 K/W |
| Reverse Recovery Time (trr) | < 250 ns |
| Package Type | TO-268 |
The device is suitable for DC-DC converters, synchronous rectification, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC motor control, temperature and lighting controls, and low voltage relays.
The maximum junction temperature (TJ) is 150°C.
Yes, it is an N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low t rr, HDMOS Family Power MOSFET.