This document describes IXYS' HiPerRFTM power MOSFETs, which feature RF capability, low gate resistance, low package inductance, high voltage and current ratings, etc. They are suitable for applications such as DC-DC converters, switched-mode power supplies, pulse generators, and RF amplifiers.
This document provides technical information for the IXYS IXFH 60N20F and IXFT 60N20F, which are N-Channel Enhancement Mode Power MOSFETs designed for F-Class (MegaHertz) switching applications. These devices feature avalanche rating, low gate charge, and low intrinsic resistance.
| Continuous Drain Current (ID) | 60 A |
|---|---|
| Maximum Operating Junction Temperature (Tj) | +150 °C |
| Switching Frequency Capability | >500kHz |
A mounting torque of 1.13 Nm or 10 lb.in. is specified for the TO-247 case style.