This datasheet provides the specifications of IXYS HiPerFETTM series N-channel enhancement mode avalanche rated power MOSFETs, including maximum voltage, maximum current, gate charge, switching time, etc.
This document provides preliminary technical specifications for the IXYS IXFH 80N20Q, IXFK 80N20Q, and IXFT 80N20Q series of N-channel enhancement mode power MOSFETs. Key features include a low on-resistance (Rog) of 28 mΩ, avalanche rating, high dv/dt capability, and fast intrinsic rectifier characteristics.
| Vos (Max) | 200 V |
|---|---|
| Ias (Max) | 80 A |
| Rog (Typ) | 28 mΩ |
| ta (Max) | 150 °C |
The maximum power dissipation is 360 W at 25°C for the TO-247 package.