This document is about the datasheet of ixfh series mosfets, including the features, characteristics, parameters, application circuits of the series
This document provides technical specifications for the IXYS HiPerFETTM Power MOSFETs in the Q-Class N-Channel Enhancement Mode family. It details three specific models: IXFH60N25Q (TO-247), IXFK60N25Q (TO-264), and IXFT60N25Q (TO-268). The text outlines maximum ratings such as drain-source voltage, continuous current, and power dissipation.
| Continuous Drain Current (ID) | 60 A |
|---|---|
| Power Dissipation (PD) | 360 W |
| On-Resistance (RDS(on)) | 4.7 mΩ |
| Thermal Resistance Junction-to-Case (TO-247) | 0.35 K/W |