IXFH 7N90Q is a N-channel enhancement mode MOSFET produced by IXYS company, with low Qg and high dv/dt features.
This document provides advanced technical information for the IXYS IXFH 7N90Q and IXFT 7N90Q Power MOSFETs, part of the Q-Class N-Channel Enhancement Mode series. These devices are avalanche rated with low Q, high dv/dt capability, and low gate charge and capacitances for easier driving and faster switching.
| Voss | 900 V |
|---|---|
| Voor | 900 V |
| loos | 7 A |
| lon | 28 A |
| Eun | 20 mJ |
| dv/dt | 5 V/ns |
| P, Ty | 180 W |
| Tory | 150 °C |
| Weight (TO-247) | 6 g |
| Weight (TO-268) | 4 g |
The maximum continuous drain current (Ios) at 25°C is 7 A.
A mounting torque of 1.13 Nm or 10 lb.in. is specified for the TO-247 package.