This PDF file is about the technical information of IXFX 90N20Q, which details the maximum rating, characteristic values, features of the product.
This document is a technical datasheet for the IXYS PLUS 247TM series, specifically covering the IXFX 90N20Q and IXFK 90N20Q models. These are N-Channel Enhancement Mode Avalanche Rated Power MOSFETs designed with low gate charge (Qg), high dV/dt capability, and low reverse recovery time (trr). The devices feature an advanced HiPerFET process and are available in TO-264 packages suitable for clip or spring mounting.
| Drain-Source Voltage (VDS) | 300 V |
|---|---|
| Continuous Drain Current (ID) at 25°C | 7.3 A |
| Peak Diode Forward Surge Current (IFSM) | 360 A |
| Reverse Recovery Time (trr) | ≤ 200 ns |
The maximum operating junction temperature (TJ) is 150°C.
The maximum continuous drain current is 7.3 A when the case temperature is 25°C.
The device has a maximum drain-source voltage rating of 300 V.
The maximum mounting torque for the TO-264 package is 0.4 Nm or 6 lb.in.