IXFH 7 N80 and IXFM 7 N80 are N-channel enhancement mode power MOSFETs from IXYS with high dv/dt, low trr and high power density. They are suitable for DC-DC converters, synchronous rectifiers, battery chargers, switched-mode power supplies and other applications.
This document provides a comprehensive technical overview of the IXYS HiPerFET™ family, specifically models IXFH7N80 (TO-247) and IXFM7N80 (TO-204). It details maximum ratings such as an 800V drain-source voltage and 150°C operating temperature. Key features include low on-resistance, fast intrinsic rectifier properties, and suitability for applications like DC-DC converters and battery chargers.
| Drain-Source Breakdown Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) at 25°C | 7 A |
| Maximum Junction Temperature (TJ) | +150 /G176C |
| On-State Resistance (RDS(on)) typical | 1.4 Ohms |
| Reverse Recovery Time (trr) at 25°C | 250 ns |
They are suitable for DC-DC converters, synchronous rectification, battery chargers, and switched-mode power supplies.
The device can be stored between -55°C and +150°C.