This document is the datasheet of IXFK series high voltage power MOSFETs, which provides the features and characteristics of this series products, including package, maximum voltage, maximum current, maximum power and maximum switching speed.
This document is a preliminary data sheet for the IXYS 80N15Q series of Power MOSFETs. The product line includes three specific part numbers: IXFH 80N15Q, IXFK 80N15Q, and IXFT 80N15Q. These devices are N-Channel Enhancement Mode transistors utilizing the HiPerFET™ process.
| Drain-Source Voltage (V_DSS) | 150 V |
|---|---|
| Continuous Drain Current (I_D) | 80 A |
| Pulse Drain Current (I_DM) | 320 A |
| Total Gate Charge (Q_g) | 180 nC |
| Turn-on Delay Time (t_d(on)) | 35 ns |
The devices utilize a Low R_g(on) HDMOS™ process.
Yes, the IXFH 80N15Q series is described as Avalanche Rated.