This datasheet lists the characteristics of ASI TVV030A, including BVCBO, BVCER, BVCEO, BVEBO, hFE, COB, PG, IMD1, etc.
This document is a datasheet for the ASI TVV030A, an NPN silicon RF power transistor. The device is designed for RF applications and features the Omnigold Metalization System. It is packaged in a .500 4L Stud (A) style package.
The datasheet provides maximum ratings including a collector current of 16A, a collector-emitter voltage of 60V, and a power dissipation of 150W at 25°C. It also lists key electrical characteristics such as breakdown voltages and capacitance values under specific test conditions.
| Collector-Source Voltage (Vcso) | 60 V |
|---|---|
| Collector-Drain Voltage (Veco) | 30 V |
| Power Dissipation (Poiss) | 150 W @ Tc = 25 °C |
| Operating Temperature (Ty) | -65 °C to +200 °C |
| Storage Temperature (Tste) | -65 °C to +150 °C |
| Collector-Source Breakdown Voltage (BVcso) | 60 V |
| Collector-Drain Capacitance (Cos) | 150 pF |
| Power Gain (Pg) | 7.5 dB |
The maximum power dissipation is 150 W at 25 °C.
The operating temperature range is from -65 °C to +200 °C.