This document is a specification table for ASI TVV030. It mainly introduces the maximum current, maximum voltage, maximum power consumption, maximum operating temperature and other parameters of the device.
The ASI TVV030 is an NPN silicon RF power transistor designed for use in radio frequency applications. It features the Omnigold™ Metalization System and is packaged in a .500 6L FLG style.
Key electrical characteristics include a collector-emitter breakdown voltage (BVceo) of 30 V and a maximum power dissipation of 150 W at a case temperature of 25°C. The device operates over a temperature range of -65°C to +200°C.
| Package Style | .500 6L FLG |
|---|---|
| Collector-Emitter Breakdown Voltage | 30 V |
| Maximum Collector Current | 15 A |
| Power Gain | 7.5 dB |
| Input Capacitance | 150 pF |
The ASI TVV030 is an NPN silicon RF power transistor designed for use in a .500 6L FLG package style.
The maximum collector-emitter voltage rating is 60 V.