This is a NPN Silicon RF power transistor, with the features of input matching network and Omnigold™ metallization system.
The document is a technical datasheet for the Advanced Semiconductor (ASI) TVV100, an NPN silicon RF power transistor designed for high-frequency power amplification applications. It features an input matching network and Omnigold™ metalization system.
Key specifications include a maximum collector current of 16A, a power dissipation of 150W at TC=25°C, and an operating temperature range from -65°C to +200°C. The device is housed in a .400 8L FLG package.
| Collector Current (IC) | 16 A |
|---|---|
| Collector-Base Breakdown Voltage (VCBO) | 65 V |
| Collector-Emitter Breakdown Voltage (VCEO) | 33 V |
| Emitter-Base Breakdown Voltage (VEBO) | 3.5 V |
| Power Dissipation (PDISS) | 150 W @ TC = 25 OC |
| Operating Temperature Range (TJ) | -65 OC to +200 OC |
| Package Style | .400 8L FLG |
The order code for this device is ASI10662.
Yes, the features list includes an Input Matching Network.