This is a specification sheet for the product ASITVV020 from Advanced Semiconductor, Inc. The product is an NPN silicon RF power transistor with a maximum operating current of 8.0A and a maximum power dissipation of 140W. It features the Omnigold™ metalization system, offering excellent performance and characteristics.
The ASI TVV020 is an NPN silicon RF power transistor designed for high-performance applications. It utilizes the Omnigold™ Metalization System to ensure reliability and performance. The device is housed in a 4L stud package with a seating plane and a 410-32 UNF thread dimension.
| Collector-Emitter Voltage (Vceo) | 35 V |
|---|---|
| Emitter-Base Voltage (Vso) | 4.0V |
| Power Dissipation (Poiss) | 140 W @T. = 25°C |
| Operating Temperature (Tt) | -65 °C to +200 °C |
| Storage Temperature (Tste) | -65 °C to +150 °C |
| Package Style | 4L STUD |
The maximum collector-emitter voltage (Vceo) is 35 V.
The operating temperature range (Tt) is from -65 °C to +200 °C.