This PDF file is about ASI TVV014A datasheet. It introduces the features and characteristics of the product, such as BVCEO, BVCER, BVEBO, ICES, hFE, PG, IMD1, etc.
The document describes the ASI TVV014A, an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It is manufactured by Advanced Semiconductor, Inc.
Key electrical characteristics include a collector-emitter breakdown voltage (BVceo) of 35 V minimum and a typical power dissipation (Pd) of 14 W at 25 °C.
| Package Style | 500 GL FLG |
|---|---|
| Metalization System | Omnigold™ |
| Collector-Base Breakdown Voltage (VcBo) | 60 V |
| Emitter-Base Breakdown Voltage (VeBo) | 4.0 V |
| Power Dissipation (Pd) @ Te = 25 °C | 14 W |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range (Tste) | -65 °C to +150 °C |
| Thermal Resistance (Bic) | 1.5°C/W |
The typical power output of 14 dB is measured at a frequency of 225 MHz.